|Title: ||Photonic crystal thin films of GaAs prepared by atomic layer deposition|
|Citation: ||Applied physics letters, 2006, vol. 89, no. 10, pp. 104-103.|
|Publisher: ||American Institute of Physics|
|Issue Date: ||Sep-2006 |
|Additional Links: ||http://link.aip.org/link/APPLAB/v89/i10/p104103/s1&Agg=doi|
|Abstract: ||Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.|
|Description: ||Full-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.|
|Keywords: ||Gallium arsenide|
Semiconductor thin films
Atomic layer deposition
|Appears in Collections: ||Centre for Materials Science Research: Surface Coating and Characterisation Research Group |
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