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espace at MMU > Faculties > Faculty of Science and Engineering > Centre for Materials Science Research: Surface Coating and Characterisation Research Group  > Photonic crystal thin films of GaAs prepared by atomic layer deposition

Please use this identifier to cite or link to this item: http://hdl.handle.net/2173/110788
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Title: Photonic crystal thin films of GaAs prepared by atomic layer deposition
Authors: Povey, I. M.
Whitehead, Debra
Thomas, K.
Pemble, Martyn
Bardosova, M.
Renard, J.
Citation: Applied physics letters, 2006, vol. 89, no. 10, pp. 104-103.
Publisher: American Institute of Physics
Issue Date: Sep-2006
URI: http://hdl.handle.net/2173/110788
DOI: 10.1063/1.2345359
Additional Links: http://link.aip.org/link/APPLAB/v89/i10/p104103/s1&Agg=doi
Abstract: Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.
Type: Article
Language: en
Description: Full-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.
Keywords: Gallium arsenide
III-V semiconductors
Semiconductor thin films
Photonic crystals
Atomic layer deposition
ISSN: 0003-6951
Appears in Collections: Centre for Materials Science Research: Surface Coating and Characterisation Research Group

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