2.50
Hdl Handle:
http://hdl.handle.net/2173/110788
Title:
Photonic crystal thin films of GaAs prepared by atomic layer deposition
Authors:
Povey, I. M.; Whitehead, Debra; Thomas, K.; Pemble, Martyn; Bardosova, M.; Renard, J.
Citation:
Applied physics letters, 2006, vol. 89, no. 10, pp. 104-103.
Publisher:
American Institute of Physics
Issue Date:
Sep-2006
URI:
http://hdl.handle.net/2173/110788
DOI:
10.1063/1.2345359
Additional Links:
http://link.aip.org/link/APPLAB/v89/i10/p104103/s1&Agg=doi
Abstract:
Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.
Type:
Article
Language:
en
Description:
Full-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.
Keywords:
Gallium arsenide; III-V semiconductors; Semiconductor thin films; Photonic crystals; Atomic layer deposition
ISSN:
0003-6951

Full metadata record

DC FieldValue Language
dc.contributor.authorPovey, I. M.en
dc.contributor.authorWhitehead, Debraen
dc.contributor.authorThomas, K.en
dc.contributor.authorPemble, Martynen
dc.contributor.authorBardosova, M.en
dc.contributor.authorRenard, J.en
dc.date.accessioned2010-09-07T10:50:20Z-
dc.date.available2010-09-07T10:50:20Z-
dc.date.issued2006-09-
dc.identifier.citationApplied physics letters, 2006, vol. 89, no. 10, pp. 104-103.en
dc.identifier.issn0003-6951-
dc.identifier.doi10.1063/1.2345359-
dc.identifier.urihttp://hdl.handle.net/2173/110788-
dc.descriptionFull-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.en
dc.description.abstractPhotonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://link.aip.org/link/APPLAB/v89/i10/p104103/s1&Agg=doien
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectSemiconductor thin filmsen
dc.subjectPhotonic crystalsen
dc.subjectAtomic layer depositionen
dc.titlePhotonic crystal thin films of GaAs prepared by atomic layer depositionen
dc.typeArticleen
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